Comparison of PbZr1−xTixO3 Thin Films Deposited on Different Substrates by Liquid Delivery Metal Organic Chemical Vapor Deposition
Dan Xie,Yong Ruan,Rui Li,Mingming Zhang,Tianling Ren,Litian Liu
DOI: https://doi.org/10.1063/1.3056163
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:In the paper, PbZr1−xTixO3 (PZT) thin films were prepared on different substrates including 8 and 4 in. silicon, Pt, Ir, and IrO2/Ir substrates by liquid delivery metal organic chemical vapor deposition. Through optimizing the preparation condition, the better film uniformity of thickness, composition, and temperature was achieved. The thickness uniformity of PZT films on 8 in. substrate was about ±3.24%. The deposition rate of Pb (15.8 nm/min) and Ti (17.9 nm/min) were much faster than that of Zr (2.5 nm/min). The growth temperature of PZT film was 570–630 °C depending on the substrate used. The growth rate of PZT films deposited on Si (30–35 nm/min) was faster than that on metal substrate. The substrate has a great effect on the ferroelectric properties of PZT films. PZT film growing on Ir was much uniform and denser than that on Pt, highlighting the good microstructure achieved. PZT films based on Ir substrate showed excellent ferroelectric properties. At the applied voltage of 5 V, the remanent polarization (2Pr) and coercive field (Ec) values of Ir/IrO2/PZT/IrO2/Ir capacitors were about 36 μC/cm2 and 50 kV/cm, respectively.