Uniformity of PZT thin films derived by liquid delivery MOCVD technology

Dan Xie,Yong Ruan,Tianling Ren,Huiwang Lin,Litian Liu
2008-01-01
Abstract:In the paper, Pb(Zr, Ti)O3(PZT) thin films were prepared on 8 inch and 4 inch silicon and metal(Ir) substrates by liquid delivery MOCVD using cocktail sources of Pb, Zr and Ti. In order to obtain PZT films with good properties, film thickness uniformity, composition uniformity, temperature uniformity were studied. The thickness uniformity of PZT films on 20.32 cm substrate was about ±3.24%. Compositional uniformity depended on the wafer temperature uniformity greatly. Through controlling the temperature of the different parts (inner, outer and shaft) of filament, the uniform temperature distribution could be achieved. The growth temperature of PZT film was adjusted to 630-650°C. The properties of metal/PZT/metal capacitors were also studied. The ferroelectric properties of Pt/PZT/Ir capacitors were excellent. At the applied voltage of 8 V, remanent polarization (Pr) and coercive field (Ec) values were about 22 μC/cm2 and 40 kV/cm respectively.
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