Abstract:It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-based thin films is due to strain engineering. However, several anomalies have occurred that put existing theories in doubt. This work carries out a detailed study of this issue using both theoretical and experimental approaches. The 10 nm Hf0.5Zr0.5O2 (HZO) films are prepared by atomic layer deposition, and three different top capping electrodes (W/MO/ITO) are deposited by physical vapor deposition. The electrical testing finds that the strain does not completely control the ferroelectricity of the devices. The results of further piezoelectric force microscopy characterization exclude the potential interference of the top capping electrodes and interface for electrical testing. In addition, through atomic force microscopy characterization and statistical analysis, a strong correlation between the grain size of the top electrode and the grain size of the HZO film has been found, suggesting that the grain size of the top electrode can induce the formation of the grain size in HZO thin films. Finally, the first-principles calculation is carried out to understand the impact of the strain and grain size on the ferroelectric properties of HZO films. The results show that the strain is the dominant factor for ferroelectricity when the grain size is large (>10 nm). However, when the grain size becomes thinner (<10 nm), the regulation effect of grain sizes increases significantly, which could bring a series of benefits for device scaling, such as device-to -device variations, film uniformity, and domain switch consistency. This work not only completes the understanding of ferroelectricity through top electrode modulation but also provides strong support for the precise regulation of ferroelectricity of nanoscale devices and ultrathin HZO ferroelectric films.

Electrical Uniformity Analyses on 12-Inch Si-Based Hf0.5zr0.5o2 Ferroelectric Capacitor Devices by Atomic Layer Deposition

Visualizing Ferroelectric Uniformity of Hf1- xZr x O2 Films Using X-ray Mapping

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors with Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O X Ferroelectrics

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Effects of Different Metal Electrodes on the Ferroelectric Properties of HZO Thin Films

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode