Abstract:Pt/PbZr0.53Ti0.47O3 (PZT)/LaAlO3 (LAO)/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3 (LSCO)/LaAlO3/Si structures for ferroelectric field effect memory applications were fabricated on n-type Si substrate by pulsed laser deposition (PLD). The Auger electron spectrometry (AES) analysis shows that a LaAlO3 buffer layer can effectively prevent Si and Ti, Pb interdiffusion between PZT and Si substrate. For both of the structure, the current density–voltage measurement shows a typical leakage current density of about 10−7A/cm2 at 8V applied voltage. Furthermore, it has been demonstrated that the PbZr0.53Ti0.47O3/LaAlO3/Si structures and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures exhibit ferroelectric switching properties, showing a memory window as large as 2 and 2.9V, respectively, under a ramp rate of 200mV/s from −6 to +6V driving voltage at 1MHz. It is believed that the La0.85Sr0.15CoO3 buffer layer deposited on LaAlO3 layer can improve the crystalline properties of PZT films, and then result in lager polarization of PZT and lager memory windows for Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures.

C-V Characteristics of Metal Ferroelectrics Insulator Semiconductor (mfis) Using A Au/Cr/Pzt/Zro2/Si Structure

Fabrication and Characteristics of Au/Cr/Pzt/Pt/Ti/Zro2/Si Structure for Mfmis Fet Application

The structural and electrical properties of Al/Pb(Zr0.52Ti 0.48)O3/Al2O3/Si with an Al 2O3 layer prepared by using the molecular atomic deposition method

Fabrication and Memory Characteristics of Ferroelectric Field Effect Transistors with MFMIS Structure

Electrical Properties of a PZT Ferroelectric Field Effect Transistor

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Fabrication and Electrical Characteristics of A Metal-Ferroelectric-Polysilicon-Insulator-Si Field Effect Transistor

Preparation of ZrO2thin Film for Metal-Ferroelectric-insulator-semiconductor (MFIS) FET's Application

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Fabrication of Ferroelectric Fet with Metal/PZT/SiO 2 /Si Structure

Fabrication And Characteristics Of A Metal/Ferroelectric/Polycrystalline Silicon/Insulator/Silicon Field Effect Transistor

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Formation and Characteristics of Pb(Zr,Ti)O3 Field-Effect Transistor with a SiO2 Buffer Layer

Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications.

C-V characteristics of ferroelectric thin film systems with MF(I)S structures on Si

Study on the I–V characteristics of ferroelectric thin film systems with the structure of MFSM

Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures.

A New Threshold Voltage Model and Research on C-V Property of MFIS Structure

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures