Abstract:Pb(Zr,Ti)O-3 (PZT) is a well known ferroelectric material for nonvolatile memory applications. However, interfacial diffusion and reaction are the main issues when PZT films were deposited directly on silicon. One way to overcome this obstacle is to deposit a barrier layer between PZT and Si. In this work, Pt/PbZr0.53Ti0.47O3/LaAlO3/Si structure has been fabricated to study the electric properties. PbZr0.53Ti0.47O3 films with 300 nm thickness and LaAlO3 buffer layers with 30 nm thickness were prepared by pulsed laser deposition technique on n-type Si (100) substrates at 650 degreesC and 450 degreesC, respectively. X-ray diffraction shows that polycrystalline PbZr0.53Ti0.47O3 film was formed on amorphous LaAlO3 buffer layer. The Auger electron spectrometer demonstrates that LaAlO3 buffer layer effectively prevent Si and Ti, Ph interdiffusion between PZT and Si substrates. For the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si Structure, the current density-voltage measurement showed a typical leakage current density of about 10(-7) A/cm(2) at 8 V applied voltage. Furthermore, it has been measured that the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si heterostructures exhibit ferroelectric switching properties, showing a memory window as large as 2 V under a ramp rate of 200 mV/s at I MHz.

C-V Characteristics of Metal Ferroelectrics Insulator Semiconductor (mfis) Using A Au/Cr/Pzt/Zro2/Si Structure

Fabrication and Characteristics of Au/Cr/Pzt/Pt/Ti/Zro2/Si Structure for Mfmis Fet Application

The structural and electrical properties of Al/Pb(Zr0.52Ti 0.48)O3/Al2O3/Si with an Al 2O3 layer prepared by using the molecular atomic deposition method

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Preparation of ZrO2thin Film for Metal-Ferroelectric-insulator-semiconductor (MFIS) FET's Application

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications.

A New Threshold Voltage Model and Research on C-V Property of MFIS Structure

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Characterization Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure Using A Hafnium Oxide As Buffer Layer For Ferroelectric-Gate Field Effect Transistors

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Studies on Al-doped ZnO Thin-Film Transistors with Pb(Zr0.3Ti0.7)O3 Gate Insulator

Fabrication And Properties Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure For Ferroelectric Dram (Fedram) Fet

Effect of Top Al2O3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2O3/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Preparation and Electrical Properties of Pt/Zro2/Si and Pt/Plzt/Zro2/Si Structures

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics