Abstract:The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect transistor (Fe-FET) remains a major challenge for its future commercial production. Here we propose a high-κ interface seed layer (SL) in the metal-FE-insulator-semiconductor (MFIS) gate stack to address this issue. We fabricated Hf0.5Zr0.5O2 (HZO) FE thin films on various high-κ dielectric SLs, including ZrO2, HfO2, (HfO2)0.75(Al2O3)0.25 (HAO), and Al2O3, and investigated their microstructures, ferroelectricity, and memory characteristics in the MFIS devices. The results show that the nucleation and growth of the FE orthorhombic phase in HZO films are affected not only by the surface energy but also by the microstructure of the high-κ SL. Additionally, we clarified the role of the high-κ SL on the memory characteristics of the MFIS devices, which were reasonably explained by the accurately calculated interface electric field. Finally, we realized a good tradeoff between the FE polarization and interface charge injection in the MFIS device with HAO high-κ SL, demonstrating a large FE window (> 1.0 V), excellent retention (> 1.6×104 s), and endurance cycles (> 105). The results will provide valuable ideas to overcome the challenge of endurance in the Fe-HfO2-based FeFET and contribute to developing other high-performance electron devices with Fe-HfO2 films grown on a dielectric SL.

A New Threshold Voltage Model and Research on C-V Property of MFIS Structure

Analyses of C-V Characteristics of Mfis Device under High and Low Frequency

C-V Characteristics of Metal Ferroelectrics Insulator Semiconductor (mfis) Using A Au/Cr/Pzt/Zro2/Si Structure

Theoretical Study of Carrier Transport in Metal–Ferroelectric–Insulator–Semiconductor Ferroelectric Tunnel Junction Memristor

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Preparation of ZrO2thin Film for Metal-Ferroelectric-insulator-semiconductor (MFIS) FET's Application

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

A Dynamic Current Model for MFIS Negative Capacitance Transistors

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Fabrication and Characteristics of Au/Cr/Pzt/Pt/Ti/Zro2/Si Structure for Mfmis Fet Application

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

A Field-Induced Threshold Switching Model of Phase-Change Memory

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application