Abstract:Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission. Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers. (C) 2007 Elsevier B.V. All rights reserved.

Charge storage characteristics of silicon nanoclusters in silicon nitride matrix grown by laser assisted chemical vapor deposition method

The Charge Storage of the Nc-Si Layer

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Charge Storage Characteristics in Al/AlN/Si Metal–insulator–semiconductor Structure Based on Deep Traps in AlN Layer

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Charge Storage in Nitrided Nanocrystalline Silicon Dots

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Charge Storage and Light Emission Properties of Three Dimension Controllable Si Nanostructures

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide