Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

Hao Zhu,Hui Yuan,Haitao Li,Curt A. Richter,Oleg Kirillov,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1109/tnano.2013.2281817

2013-01-01

IEEE Transactions on Nanotechnology

Abstract:In this paper, tantalum pentoxide (Ta$_{2}$O $_{5}$) has been investigated as the charge-storage dielectric for discrete, multibit memory applications. Two Ta$_{2}$O $_{5}$ containing dielectric stacks, Al $_{2}$O$_{3}$/Ta $_{2}$O$_{5}$/SiO $_{2}$ and Al$_{2}$O $_{3}$/Ta$_{2}$O $_{5}$/Al$_{2}$O $_{3}$/Ta$_{2}$O $_{5}$/SiO$_{2}$, have been fabricated and measured. Both structures exhibited excellent nonvolatile memory characteristics: fast program/erase speed with significant flat-band voltage shift at 1 μs, long retention, and good endurance. Interesting multiple staircase memory characteristics observed in the devices with two layers of Ta $_{2}$O$_{5}$ exhibit multiple, discrete charge-storage states. Such an integration of multibit in one cell is very attractive for developing high-density nonvolatile memory.