Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

Formation of Cosi2/Cosixny Nanocrystals for Nonvolatile Memory Application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Memory Characteristics of Ni-NiOx Core-Shell Nanocrystals Embedded in SiO2 Gate Oxide for Nonvolatile Flash Devices

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Preparation of NiFe Binary Alloy Nanocrystals for Nonvolatile Memory Applications

Co/HfO2 Core-Shell Nanocrystal Memory

The Development of Nanometer Solid State Storage Memory

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Comparison of Discrete-Storage Nonvolatile Memories: Advantage of Hybrid Method for Fabrication of Au Nanocrystal Nonvolatile Memory

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory