Abstract:Schottky junctions based on one-dimensional semiconductor nanomaterials, such as nanowires (NWs) and nanobelts (NBs), have been widely used in building high-performance nano-electric and nano-optoelectric devices during the past 15 years. Meanwhile, with considerable development in diverse application fields, more and more interests are turning to the investigation of the fundamental physics inside the junctions. The inhomogeneity of the interface between semiconductor NWs/NBs and metal electrodes has significant influence on the electrical transport mechanism of Schottky junctions. However, few researchers are involved in such studies and the physical mechanism here is far from fully understood. In this work, we fabricated Schottky junctions based on single CdSe NWs, in which Au was used as a Schottky contact with CdSe NW. The temperature dependence of the electrical transport characteristics of typical CdSe NW/Au Schottky junctions were characterized. The ideality factor was found to decrease and the zero-bias Schottky barrier height (SBH) increased monotonously as the temperature was increased from 140 to 320 K, and this relationship was ascribed to SBH inhomogeneity. The electrical transport mechanism was analyzed quantitatively with a spatial potential fluctuation model, in which SBHs obey the Gaussian distribution. The standard deviation of the SBH distribution was determined to be as high as 13.54% and 13.94% of the zero-bias mean SBH in the temperature ranges 140-200 K and 200-320 K, respectively. Our work revealed the barrier inhomogeneity at CdSe NW/Au interfaces and its influence on the electrical transport mechanism of NW-based Schottky junctions.

The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact

The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Double Threshold Behaviour of I-V Characteristics of Cosi2/Si Schottky Contacts

Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

Al/Si/Ge/Si Schottky contacts with controllable barrier heights

Schottky Barrier Characteristics of Polycrystalline and EpitaxialCoSi2/n-Si(111) Contacts Formed by Solid State Reaction

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

A Beem Study of Schottky Barrier Height Distributions of Ultrathin Cosi2/N-Si(100) Formed by Solid Phase Epitaxy

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability

Influence of Interface Inhomogeneity on the Electrical Transport Mechanism of CdSe Nanowire/au Schottky Junctions

Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I-V-T Technique

Ultra-Thin Metal-Silicide/Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy

Schottky Barrier Height Inhomogeneities of Nickel Mono-Silicide/N-Si Contact Studied by I-V-T Technique

Electrical Characteristics of Cosi2/N-Si(100) Schottky Barrier Contacts Formed by Solid State Reaction