Abstract:Silicon germanium (SiGe) alloys hold promise for thermoelectric power generation at high temperatures and have been applied in deep-space missions. However, enhancement of the dimensionless thermoelectric figure-of-merit (ZT) is still needed for practical civil applications of SiGe. In this work, we report high-performance oxide/SiGe bulk composites, that were obtained via hot- pressing sintering of mixed powder composed of phosphorus (P) doped SiGe prepared via mechanical alloying, using a ball milling technique and La-Nb-doped SrTiO3 (La-Nb-STO). The La-Nb-STO powder was obtained from ball milling of a bulk La-Nb-STO sample that was sintered via hot pressing of hydrothermally synthesized La-Nb-STO powder. Controlling the amount of La-Nb-STO nanoparticles added to SiGe matrix increased the power factor by optimizing the electron concentration and mobility in the composite. In addition, compared with single-phase P-doped SiGe, the second phase decreased the thermal conductivity because of additional phonon scattering at the interface. As a result, a high ZT of 0.91 was realized in the n-type oxide/SiGe bulk composite at 1000 K, which was 18% larger than for the typical materials used in space flight missions, and 5% higher than the single-phase SiGe alloys obtained in present study. The strategy used in this study could also be viable to further enhance the ZT of nanostructured n-type SiGe and SrTiO3-based oxide materials.

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Low Contact Resistivity of Ti/TiN/Al for NiSi2 on Epitaxial Si:P Structure at Full Low-Temperature Process below 450 °C

Variation of Contact Resistivity with Ge in TiW/P<sup>+</sup> SiGe Contacts

Enhanced thermoelectric performance in n-type SrTiO3/SiGe composite.

Lateral growth and three-dimensional effects in contacts between NiSiGe and p-SiGe

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Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

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Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

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Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

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Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Electrical Properties Of The Tisi2-Si Transition Region In Contacts: The Influence Of An Interposed Layer Of Nb

Comprehensive Study of Ga Activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 Contact Resistivity Achieved on Ga Doped Ge Using Nanosecond Laser Activation

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison