Abstract:Optimizing thermal anneals of Si-implanted $\beta$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $\beta$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $\Omega$-mm. Homoepitaxial $\beta$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $\beta$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $\beta$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $\beta$-phase with inclusions that resemble the $\gamma$-phase.

Comprehensive Study Of Ga Activation In Si, Sige And Ge With 5 X 10(-10) Omega.Cm(2) Contact Resistivity Achieved On Ga Doped Ge Using Nanosecond Laser Activation

Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10<sup>−10</sup> Ω·cm<sup>2</sup> contact resistivity achieved on Ga doped Ge using nanosecond laser activation

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si 1-x Ge x by ion implantation and subsequent nanosecond laser annealing

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Thermal activation of low-density Ga implanted in Ge

Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ Cm2 Contact Resistivities to P-Sige

Silicon implantation and annealing in β -Ga2O3: Role of ambient, temperature, and time

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Study on the p-type ohmic contact in GaAs-based laser diode

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs