Abstract:Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) doping promotes the conversion of BPDs to threading edge dislocations (TEDs) and improves the reliability of 4H-SiC-based bipolar power devices. However, the interaction between N and BPDs, and the effect of N on the electronic properties of BPDs are still ambiguous, which significantly hinder the understanding on the electron-transport mechanism of 4H-SiC-based bipolar power devices. Combining molten-alkali etching and the Kelvin probe force microscopy (KPFM) analysis, we demonstrate that BPDs create acceptor-like states in undoped 4H-SiC, while acting as donors in N-doped 4H-SiC. First-principles calculations verify that BPDs create occupied defect states above the valence band maximum (VBM) and unoccupied defect states under the conduction-band minimum (CBM) of undoped 4H-SiC. The electron transfer from the defect states of intrinsic defects and native impurities to the unoccupied defect states of BPDs gives rise to the acceptor-like behavior of BPDs in undoped 4H-SiC. Defect formation energies indicate that N atoms can spontaneously decorate BPDs during the N doping of 4H-SiC. The binding between N and BPD is strong against decomposition. The accumulation of N dopants at the core of BPDs results in the accumulation of donor-like states at the core of BPDs in N-doped 4H-SiC. This work not only enriches the understanding on the electronic behavior of BPDs in N-doped 4H-SiC, but also helps understand the electron transport mechanism of 4H-SiC-based bipolar power devices.

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Theory of shallow and deep boron defects in 4H-SiC

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Light-Induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Nitrogen decoration of basal plane dislocations in 4H-SiC

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Lateral Boron Distribution in Polycrystalline SiC Source Materials

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers