Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Theory of shallow and deep boron defects in 4H-SiC

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

A Study of the Configurations of Boron in Silicon Using an Empirical Approach

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

On the experimental properties of the TS defect in 4H-SiC

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Defects in SiC for Quantum Computing

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Carbon and vacancy centers in hexagonal boron nitride

Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Influence of point defects on the electronic properties of boron nitride nanosheets

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Impacts of Point Defects on Shallow Doping in Cubic Boron Arsenide: A First Principles Study