A Study of the Configurations of Boron in Silicon Using an Empirical Approach

M.Merlyne De Souza,Gehan A.J. Amaratunga
DOI: https://doi.org/10.1016/0927-0256(94)90154-6
IF: 3.572
1994-01-01
Computational Materials Science
Abstract:The configuration space of boron in silicon has been investigated using an empirical potential approach. This study indicates that energetically favourable configurations consist of a number of three-fold coordinated split interstitials. A configuration consisting of a four-fold boron-interstitial in combination with a two-fold silicon is found to be perfectly aligned in the <111> direction. This configuration in the positive charge state is a possibility for the boron interstitial related defect found via EPR and DLTS.
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