Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Coordination Number of Doped Boron Atoms in Photochemically-Deposited Amorphous Silicon Studied by X-Ray Photoelectron Spectroscopy

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

A Study of the Configurations of Boron in Silicon Using an Empirical Approach

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Doping dependence of boron–hydrogen dynamics in crystalline silicon

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Optical Method for Calculating the Dopant Concentration of Doped Amorphous Semiconductors

Doping silicon nanocrystals with boron and phosphorus

The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H

Two‐acceptor levels in the band gap of boron‐doped diamond semiconductors analyzed by soft x‐ray absorption spectroscopy and DV–Xα calculations

Boron-Phosphorus Pairs in Compensated Crystalline Silicon

Structural Features of Boron-Doped Si(113) Surfaces Simulated by Ab Initio Calculations

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron-Boron Related Complexes in Silicon

Direct Patterning of Boron-doped Amorphous Carbon Using Focused Ion Beam-assisted Chemical Vapor Deposition

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon