Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Boron-Phosphorus Pairs in Compensated Crystalline Silicon

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron-Boron Related Complexes in Silicon

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence

A Study of the Configurations of Boron in Silicon Using an Empirical Approach

Effect of Dopant Compensation on the Performance of Czochralski Silicon Solar Cells

Doping silicon nanocrystals with boron and phosphorus

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Doping dependence of boron–hydrogen dynamics in crystalline silicon

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Generation Kinetics of Boron-Oxygen Complexes in P-Type Compensated C-Si

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Coordination Number of Doped Boron Atoms in Photochemically-Deposited Amorphous Silicon Studied by X-Ray Photoelectron Spectroscopy

Influence of the Compensation Level on the Performance of P-Type Crystalline Silicon Solar Cells: Theoretical Calculations and Experimental Study

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon