Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Generation Kinetics of Boron-Oxygen Complexes in P-Type Compensated C-Si

Light-Induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon

Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

Ab-Initio Calculation Study on the Formation Mechanism of Boron-Oxygen Complexes in C-Si

New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon

Boron-Phosphorus Pairs in Compensated Crystalline Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

Suppression of Boron-Oxygen Defects in Czochralski Silicon by Carbon Co-Doping

First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Effect of Germanium on the Kinetics of Boron-Oxygen Defect Generation and Dissociation in Czochralski Silicon

Experimental Evidence Of Staggered Oxygen Dimers As A Component Of Boron-Oxygen Complexes In Silicon

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells