Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Experimental Evidence Of Staggered Oxygen Dimers As A Component Of Boron-Oxygen Complexes In Silicon

First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Suppression of Boron-Oxygen Defects in Czochralski Silicon by Carbon Co-Doping

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

The Evidence for Interaction of the N-N Pair with Oxygen in Czochralski Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Ab-Initio Calculation Study on the Formation Mechanism of Boron-Oxygen Complexes in C-Si

Oxygen Diffusion in Silicon: The Influence of Hydrogen

The Structure and Properties of (aluminum, Oxygen) Defect Complexes in Silicon

Early Stages of Oxygen Precipitation in Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Deciphering mechanisms of enhanced-retarded oxygen diffusion in doped Si

Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

Study on the oxygen concentration reduction in heavily Sb-doped silicon