Abstract:Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for atomic impurities such as oxygen atoms. GBs can induce charge carriers recombination significantly reducing carrier lifetimes and therefore they can be detrimental for Si device performance. We studied the correlation between structural, energetic and electronic properties of {\Sigma}3{111} Si GB in the presence of vacancies, strain and multiple O segregation. The study of the structural and energetic properties of GBs in the presence of strain and vacancies gives an accurate description of the complex mechanisms that control the segregation of oxygen atoms. We analysed tensile and compressive strain and we obtained that local tensile strain around O impurities is very effective for segregation. We also studied the role of multiple O impurities in the presence of Si vacancies finding that the segregation is favorite for those structures which have restored tetrahedral covalent bonds. The presence of vacancies attract atomic impurities in order to restore the electronic stability: the interstitial impurity becomes substitutional. This analysis was the starting point to correlate the change of the electronic properties in {\Sigma}3{111}Si GBs with O impurities in the presence of strain and vacancies. For each structure we analysed the density of states and its projection on atoms and states, the band gaps, the segregation energy and their correlation in order to characterise the nature of new energy levels. Actually, knowing the origin of defined electronic states would allow the optimization of materials in order to reduce non-radiative electron-hole recombination avoiding charge and energy losses and therefore improving solar cell efficiency.

Ab-Initio Calculation Study on the Formation Mechanism of Boron-Oxygen Complexes in C-Si

First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon

New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Generation Kinetics of Boron-Oxygen Complexes in P-Type Compensated C-Si

Local Mapping Of The Oxygen-Boron Complex In 2x2 Cm(2) And 10x10 Cm(2) High-Efficiency Cz-Si Solar Cells By Lock-In Thermography And Lbic

Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon

Experimental Evidence Of Staggered Oxygen Dimers As A Component Of Boron-Oxygen Complexes In Silicon

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Interaction mechanism between hydrogen and boron during the Al–Si solvent refining with hydrogen assistance

Iron-boron Pair Dissociation in Silicon under Strong Illumination

Oxygen Annealing Behavior in Multicrystalline Silicon

Oxygen and Carbon Behaviors in Multi-Crystalline Silicon and Their Effect on Solar Cell Conversion Efficiency

Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies

First-principles Investigation of Oxygen-Excess Defects in Amorphous Silica

The Structure and Properties of (aluminum, Oxygen) Defect Complexes in Silicon