Abstract:Using molecular dynamics method, we investigate the diffusion property of lithium in different silicon structures and silicon structure's disorder extent during lithium's diffusion process. We find that the pathway and the incident angle between the direction of barrier and diffusion of lithium are also the essential factors to the lithium's diffusion property in silicon anode besides the barrier. Smaller incident angle could decrease the scattering of lithium in silicon structure effectively. Moreover, lithium diffuses easier in the Li-Si alloy structure of higher lithium concentration with deeper injection depth. The silicon's structure will be damaged gradually during the charge and discharge process. However, it will also recover to initial state to a great extent after relaxation. Therefore, the damage of lithium diffusion to silicon anode in the structure of low lithium concentration is reversible to a great degree. In addition, the silicon structure of <110> crystal orientation perform better properties in both lithium's diffusivity and structural stability.

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Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Generation Kinetics of Boron-Oxygen Complexes in P-Type Compensated C-Si

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New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Lithium Diffusion in Silicon and Induced Structure Disorder: A Molecular Dynamics Study

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon

First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

New Insights on LeTID/BO-LID in P-Type Mono-Crystalline Silicon