Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Local Mapping Of The Oxygen-Boron Complex In 2x2 Cm(2) And 10x10 Cm(2) High-Efficiency Cz-Si Solar Cells By Lock-In Thermography And Lbic

Oxygen Intercalation Induced by Photocatalysis on the Surface of Hybrid Lead Halide Perovskites

Ab-Initio Calculation Study on the Formation Mechanism of Boron-Oxygen Complexes in C-Si

Dark and illuminated J(V) characteristics of thin layered bulk heterojunction P3HT:PCBM sandwich solar cells after thermal treatment

Correlating Nanoscale Morphology with Device Performance in Conventional and Inverted PffBT4T-2OD:PC<sub>71</sub>BM Polymer Solar Cells

Correlating Nanoscale Morphology with Device Performance in Conventional and Inverted PffBT4T-20D:PC71 BM Polymer Solar Cells

Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films.

Nanoscale Structural and Electronic Evolution for Increased Efficiency in Polymer Solar Cells Monitored by Electric Scanning Probe Microscopy

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Separated striations in n-type Czochralski silicon solar cells

Oxygen doping of P3HT:PCBM blends: Influence on trap states, charge carrier mobility and solar cell performance

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Competition between morphological attributes in the thermal annealing and additive processing of polymer solar cells

Optical modeling of microcavity strategy for highly efficient ITO-free organic solar cells with varied photoactive layers

Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production

Nanometric-Mapping and In Situ Quantification of Site-specific Photoredox Activities on 2D Nanoplates

Morphological and bandgap engineering of LiZnBO3 nanostructures via hydrothermal process for enhanced solar light photocatalysis

Competing Activation and Deactivation Mechanisms in Photodoped Bismuth Oxybromide Nanoplates Probed by Single-Molecule Fluorescence Imaging

Realization and Simulation of Interdigitated Back Contact Silicon Solar Cells with Dopant-Free Asymmetric Hetero-Contacts

Tapered Cross‐Section Photoelectron Spectroscopy of State‐of‐the‐Art Mixed Ion Perovskite Solar Cells: Band Bending Profile in the Dark, Photopotential Profile Under Open Circuit Illumination, and Band Diagram

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current