Abstract:Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Two‐acceptor levels in the band gap of boron‐doped diamond semiconductors analyzed by soft x‐ray absorption spectroscopy and DV–Xα calculations

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Optical properties of boron-doped diamond

Theoretical investigations of the heavily boron doped pentadiamond

Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

Carbon-related donor–acceptor pair transition in the infrared in h-BN

Optical and Electrical Characterization of Boron-Doped Diamond

Coordination Number of Doped Boron Atoms in Photochemically-Deposited Amorphous Silicon Studied by X-Ray Photoelectron Spectroscopy

Unraveling the Role of Boron Dimers in the Electrical Anisotropy and Superconductivity in Boron-doped diamond

The first principle study and experimental of boron synergistic sulfur doping in diamond

Electron-Phonon Coupling In A Boron-Doped Diamond Superconductor

Band structure of boron doped carbon nanotubes

Doped 2D diamond: properties and applications

Coexistence of Localization and Itineracy of Electrons in Boron-Doped Diamond

Intervalence Plasmons in Boron-Doped Diamond