Abstract:Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Coexistence of Localization and Itineracy of Electrons in Boron-Doped Diamond

Intervalence Plasmons in Boron-Doped Diamond

Optical properties of boron-doped diamond

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Electron-Phonon Coupling In A Boron-Doped Diamond Superconductor

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Unraveling the Role of Boron Dimers in the Electrical Anisotropy and Superconductivity in Boron-doped diamond

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

First-Principles Calculations of P-B Co-Doped Cluster N-Type Diamond

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Nanoscale probing of image-potential states and electron transfer doping in borophene polymorphs

Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study

Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films

The occupied electronic structure of ultrathin boron doped diamond

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Localization and Superconductivity in Doped Semiconductors

Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films