Theoretical investigations of the heavily boron doped pentadiamond

Zhen-Yu Liu,Roberts I. Eglitis,Hong-Xing Zhang,Ran Jia
DOI: https://doi.org/10.1016/j.diamond.2022.109127
IF: 3.806
2022-05-23
Diamond and Related Materials
Abstract:In this work, two B-doped pentadiamond systems (named as B 6 C 5 and B 7 C 4 ) are designed and carefully studied with the aid of Density Functional Theory (DFT) calculations. As an additional reference system, the N-doped pentadiamond C 10 N is also taken into account in this study. Their structural stabilities are verified from different aspects. These systems can be considered as heavily doped semiconductors. Especially, the B 6 C 5 lattice possesses an inherent indirect band gap of 2.01 eV estimated at HSE06 level. Doping with B-atoms in pentadiamond can not only optimize its band gap, but also expand its absorption region into the visible and near infrared regions. These excellent electronic and optical properties, coupled with their significantly low bulk densities around 2.0 g/cm −2 and fairish mechanical strengthes, make the B 6 C 5 and B 7 C 4 systems to be promising candidates in semiconductor industry and solar utilization fields.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
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