Demonstration Of The First Power Ic On 4h-Sic

J. H. Zhao,Y. Zhang,M. Su,K. Sheng,P. Alexandrov,L. Fursin

DOI: https://doi.org/10.1109/ISDRS.2007.4422416

2007-01-01

Abstract:Development of the first PIC on SiC has been reported. Such a technology can provide ultra-compact and efficient system for high temperature and high frequency applications.

What problem does this paper attempt to address?

Demonstration of the first SiC power integrated circuit

Kuang Sheng,Yongxi Zhang,Ming Su,Jian H. Zhao,Xueqing Li,Petre Alexandrov,Leonid Fursin

DOI: https://doi.org/10.1016/j.sse.2008.06.037

IF: 1.916

2008-01-01

Solid-State Electronics

Abstract:This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC–DC power converters at high frequencies is discussed.
Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$

Yu Zhou,Xiaoyan Tang,Qingwen Song,Chao Han,Hao Yuan,Yancong Liu,Sicheng Liu,Yimen Zhang,Yuming Zhang

DOI: https://doi.org/10.1109/tpel.2021.3122261

IF: 5.967

2022-04-01

IEEE Transactions on Power Electronics

Abstract:In this letter, for the first time, a high-performance picosecond 4H-SiC diode avalanche shaper (DAS) with a novel ${p^+/p^-/n^+}$ multilayer epitaxial structure is experimentally demonstrated and characterized. For fabrication of our 4H-SiC DAS, the multilayer epitaxial stacks have been designed in detail and grown using continuous multilayer epitaxial wafer growth. To excite the delayed avalanche breakdown (DAB) effect, the electric field profile in multilayer epitaxial stacks has been numerically simulated in detail to suppress the surface electric field crowding and premature breakdown during the overvoltage pulse applied. A 2.5-kV, 1-ns pulsed power generator is adopted to drive our fabricated SiC DAS, the output on a 50 $\Omega$ load is 1860 V, 100 ps, lead a voltage rise rate of 11.14 kV/ns, and a peak power density of 62 MW/cm$^2$. Furthermore, the fabricated SiC DAS operates stably in multipulse mode at 1 MHz. To the best of our knowledge, this is the first experimental result reported for picosecond DAS based on the 4H-SiC. This article is significant for developing 4H-SiC-based ultrafast closing switches.

engineering, electrical & electronic
High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A. Mihaila,F. Udrea,S. J. Rashid,P. Godignion,P. Brosselard,D. Tournier,J. Millan,G. Amaratunga

DOI: https://doi.org/10.1109/ISPSD.2006.1666096

2006-01-01

Abstract:The continuous progress made over the past years in terms of material quality and key technological issues combined with a better understanding of the devices' physics have placed Silicon Carbide (SiC) devices in a position from where they can challenge the present day Silicon (Si) solutions in high power/high temperature applications. Since they avoid gate oxide-related problems such as channel mobility and high temperature long term reliability typical of SiC MOSFETs, SiC JFETs are attractive candidates for applications requiring high power/high temperature operation. This paper reports for the first time experimental results of a 4H-SiC normally on JFET using buried p+ gates and buried field rings (BFRs) in the termination region. The device uses a double layer epitaxial process with a novel, more highly doped buffer layer. The paper also investigates the high temperature operation (up to 300 degrees C) of the device.
Membrane High Voltage Devices - A Milestone Concept In Power Ics

F Udrea,T Trajkovic,Gaj Amaratunga

DOI: https://doi.org/10.1109/IEDM.2004.1419185

2004-01-01

Abstract:We report for the first time a novel technology concept in Power ICs. We present detailed experimental data obtained during several years of development and demonstrate the application of the new technology in a range of highly efficient switch mode power supplies (SMPS). This technology is capable of delivering more than 3 times higher current density (30 A/cm(2)), and two to five times the switching speed (500 kHz for 650 V rated devices) of state-of-the-art power IC technologies such as Junction-Isolation or Silicon-on-Insulator. The new concept is based on merging of the MEMS and CMOS SOI technologies to increase the breakdown ability of the power device and reduce its output capacitance (1). The MEMS step is fully CMOS compatible and consists of a back-side deep reactive ion etching (DRIE) performed selectively in the drift region of the power device to realize multiple membranes of ultra-thin silicon-dielectric films.
Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

X Xin,F Yan,P Alexandrove,CM Stahle,J Hu,A Matsumura,X Li,A Weiner,HJ Zhao

DOI: https://doi.org/10.1049/el:20057320

2005-01-01

Electronics Letters

Abstract:The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.
High efficiency power factor correction power supply based on SiC device

Peng-fei FAN,Long XIAO,Jin-xiang ZHAN,Hao CHEN,Guo-zhu CHEN

DOI: https://doi.org/10.3969/j.issn.1001-4551.2017.04.015

2017-01-01

Abstract:Aiming at the problem that the bridge Boost power factor correction circuit was not efficient.The basic structure and control method of Boost power factor correction circuit,the characteristics and development process of SiC device were analyzed,and the scheme of using SiC device to enhance its power density was proposed.The design of important parameters in power factor correction circuit was introduced.A design method for PFC power inductor was introduced.The design steps were analyzed and the loss distribution of traditional bridge power factor correction circuit was analyzed.Several MOSFETs with different materials were selected and the corresponding 1.2 kW prototype was set up,and the efficiency of each prototype was measured.The results indicate that compares with infineon's latest super-junction structure with CoolMOS,ROHM's high current Si MOSFET,the use of SiC MOSFET can improve the efficiency of the bridge power factor circuit.
Demonstration of Irradiation-Resistant 4H-Sic Based Photoelectrochemical Water Splitting

Yan Pei,Wenhao Geng,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/24050011

2024-01-01

Journal of Semiconductors

Abstract:4H silicon carbide(4H-SiC) has gained a great success in high-power electronics, owing to its advantages of wide bandgap, high breakdown electric field strength, high carrier mobility, and high thermal conductivity. Considering the high carrier mobility and high stability of 4H-SiC, 4H-SiC has great potential in the field of photoelectrochemical(PEC) water splitting. In this work, we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays. A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity, that is, a constant low-voltage etching followed by a pulsed high-voltage etching. The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays, respectively. It is found that the nanoporous arrays with medium porosity has the highest PEC current, because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays. The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy, which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.
Experimental Demonstration of −730V Vertical SiC P-Mosfet with High Short Circuit Withstand Capability for Complementary Inverter Applications

Junjie An,Masaki Namai,Mikiko Tanabe,Dai Okamoto,Hiroshi Yano,Noriyuki Iwamuro

DOI: https://doi.org/10.1109/iedm.2016.7838391

2016-01-01

Abstract:A new p-channel vertical 4H-SiC MOSFET has been successfully fabricated for the first time. Its breakdown voltage is over-730 V and the short circuit capability is 15% higher than that of 4H-SiC n-channel MOSFET. This could be a superior power device applicable for high frequency complementary inverter.
4H–SiC photoconductive switching devices for use in high-power applications

S. Doǧan,A. Teke,D. Huang,H. Morkoç,C. B. Roberts,J. Parish,B. Ganguly,M. Smith,R. E. Myers,S. E. Saddow

DOI: https://doi.org/10.1063/1.1571667

IF: 4

2003-05-05

Applied Physics Letters

Abstract:Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H–SiC and tested at dc bias voltages up to 1000 V. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3×1011, respectively. Photoconductivity pulse widths for all applied voltages were 8–10 ns. These excellent results are due in part to the removal of the surface damage by high-temperature H2 etching and surface preparation. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large step width were achieved.

physics, applied
Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

Tongtong Yang,Yan Wang,Ruifeng Yue

DOI: https://doi.org/10.1088/1674-4926/43/8/082801

2022-01-01

Journal of Semiconductors

Abstract:In this article, the design, fabrication and characterization of silicon carbide (SiC) complementary-metal-oxide-semiconductor (CMOS)-based integrated circuits (ICs) are presented. A metal interconnect strategy is proposed to fabricate the fundamental N-channel MOS (NMOS) and P-channel MOS (PMOS) devices that are required for the CMOS circuit configuration. Based on the mainstream 6-inch SiC wafer processing technology, the simultaneous fabrication of SiC CMOS ICs and power MOSFET is realized. Fundamental gates, such as inverter and NAND gates, are fabricated and tested. The measurement results show that the inverter and NAND gates function well. The calculated low-to-high delay (low-to-high output transition) and high-to-low delay (high-to-low output transition) are 49.9 and 90 ns, respectively.
Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Fengtao Yang,Laili Wang,Hang Kong,Mengyu Zhu,Xingshuo Liu,Xiaohui Lu,Mengjie Qin,Tongyu Zhang,Yongmei Gan,Lixin Jia

DOI: https://doi.org/10.1109/tpel.2022.3198835

IF: 5.967

2022-10-08

IEEE Transactions on Power Electronics

Abstract:Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature. However, existing packaging technologies obstruct the use of SiC devices at high temperature and impede the continued exploration of SiC devices in high-temperature applications. This article proposes a novel hermetic metal packaging method called compact-interleaved package. The compact-interleaved power module handles the mentioned problems from three key considerations: packaging parasitic parameters, direct electrode measurement structure, and packaging materials. Based on the elaborate high-temperature double pulse test platform, dynamic characteristics of 1.2-kV/13-mΩ 4H-SiC power mosfet are studied under the condition of extremely high junction temperature (up to 550 °C) and extremely high switching speed (about 3 kA/μs). The dynamic characteristics of SiC mosfet are theoretically analyzed and verified by experimental measurements. Compared with other SiC bipolar devices, SiC mosfet maintains outstanding dynamic characteristics at extremely high temperatures and has an optimal operating high-temperature range. Finally, this article demonstrates an extreme-high-temperature power electronic converter to verify the superiority of the packaging method, and also proves the extreme-high-temperature power converting capability of SiC mosfet.

engineering, electrical & electronic
Extreme High Efficiency Enabled by Silicon Carbide (sic) Power Devices

Zibo Chen,Alex Q. Huang

DOI: https://doi.org/10.1016/j.mssp.2023.108052

IF: 4.1

2024-01-01

Materials Science in Semiconductor Processing

Abstract:Efficient renewable electricity generation, conversion, and delivery are vital for addressing the pressing need to limit global temperature rise to below 2 degrees C by 2050. The electrification of various industries is equally imperative. Silicon Carbide (SiC) power semiconductors represent a transformative technology, akin to Lithium-ion batteries, in achieving these objectives. With the swift commercialization of SiC power devices, ranging from 600V to 3.3 kV and with future potential up to tens of kV, SiC MOSFET is rapidly supplanting silicon IGBT technology, delivering remarkable power conversion efficiency in high-power applications. SiC MOSFETs are also poised to enable new applications, such as the replacement of the century-old 60 Hz Low-Frequency Transformer (LFT) with a Solid-State Transformer (SST). This paper provides an overview of several advancements in novel SiC power devices tailored for high-voltage and high-power applications. It showcases various examples of high-power SiC power conversion applications, illustrating that SiC power electronics technology is rapidly approaching the realization of a nearly 100 % efficiency power conversion system.
Demonstration of the First 4H-Sic Avalanche Photodiodes

F Yan,C Qin,JH Zhao,M Bush,GH Olsen

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1431

IF: 1.916

2000-01-01

Solid-State Electronics

Abstract:4H-SiC visible-blind reach-through avalanche photodiodes (RAPDs) were designed and fabricated with mesa edge termination and thermal oxide passivation techniques. The devices show “hard” avalanche breakdown with a positive temperature coefficient. The photo response spectra, measured at different biases, displayed a maximum responsivity of 106 A/W, and a corresponding optical gain of about 500.
Modeling and Design of a Monolithically Integrated Power Converter on SiC

L. C. Yu,K. Sheng,J. H. Zhao

DOI: https://doi.org/10.1016/j.sse.2008.06.020

2007-01-01

Abstract:To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200V and an output voltage of 400V, 2.5A, operating at 1kW and 5MHz.
Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

Xueqian Zhong,Baozhu Wang,Jue Wang,Kuang Sheng

DOI: https://doi.org/10.1109/ted.2018.2809475

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:This paper presents the fabrication, experimental analysis and electrical characterization of the first functional SiC superjunction (SJ) device. A trench-etching-and-sidewall-implant method has been developed to implement the SJ principle on a SiC Schottky diode. Several key process steps, including deep trench etching, ion implantation, and high-temperature annealing, are found to have noticeable influences on the device performances. The corresponding influences are studied by both simulation-aided theoretical analysis and experimental measurements. The highestmeasured cell blocking voltage was 1350 V, which achieves 95% of the simulated blocking voltage for the perfectly charge-balanced SJ structure. The measured device specific on-resistance was 0.92 m Omega . cm(2). The SJ drift region specific on-resistance as low as 0.32 m Omega . cm(2) was obtained after subtracting the substrate resistance. This result successfully breaks the SiC 1-D unipolar limit.
A 1200V/100A all-SiC power module for boost converter of EV/HEV's motor driver application

Weicheng Zhou,Qing Guo,Xinke Wu,Yi Liu,Kuang Sheng

DOI: https://doi.org/10.1109/IFWS.2016.7803751

2016-01-01

Abstract:Motor driver is one of the most important parts in EV and HEV, and power electronics device plays a dominate role in it. Silicon Carbide (SiC) power devices have shown great advantages compared with conventional Si power device for high voltage, high frequency, and high temperature applications, which shows great potential in motor driver applications. In this work, a 1200V/100A all-SiC power module is designed and fabricated. The module is verified in a 19kW boost converter under different ambient temperature, which can be used as the first stage of a motor driver. The measurement results show that this all-SiC power module has a low parasitic parameters. An operating frequency of 100kHz is utilized in the measurement, which shows great potential for the reduction of the volume of motor driver.
Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Xueqian Zhong,Baozhu Wang,Kuang Sheng

DOI: https://doi.org/10.1109/ispsd.2016.7520820

2016-01-01

Abstract:This paper presents the first functional SiC super junction devices, SiC SJ Schottky diodes, which substantially improve the trade-off between the breakdown voltage and specific on-resistance in SiC power devices. Processes for fabricating SJ structures by using a trench-etching-and-sidewall-implant method has been developed and a functional SJ Schottky diode has been demonstrated based on this processing method. The measured cell blocking voltage was 1350V, which achieves 95% of the simulated blocking voltage for the ideally-charge-balanced SJ structure. The measured device specific on-resistance was 0.92mΩ·cm2. The SJ drift region specific on-resistance as low as 0.32 mΩ·cm2 was obtained after subtracting the substrate resistance.
Advances in SiC materials and devices: an industrial point of view

R.R Siergiej,R.C Clarke,S Sriram,A.K Agarwal,R.J Bojko,A.W Morse,V Balakrishna,M.F MacMillan,A.A Burk,C.D Brandt,A.A Burk, Jr

DOI: https://doi.org/10.1016/s0921-5107(98)00438-3

1999-07-01

Abstract:Silicon Carbide (SiC) is an emerging semiconductor that has proven itself especially well-suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance. In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed (1) semi-insulating for MESFETs, and (2) highly conducting boules for SITs and power switches. Very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3–5 μm h−1 exhibiting unintentional n-type doping of ∼1×1015 cm−3, and room temperature Hall mobilities of ∼1000 cm2 V−1 s−1. Controlled n-type doping between ∼5×1015 cm−3 and >1×1019 cm−3 has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS Turn-Off Thyristors (MTO™) are being investigated as power switches because they offer ease of turn-off, 500°C operation and reduced cooling requirements. In the fabrication of high-power, high-frequency transistors at UHF, L-, S-, and X-bands SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistor packages have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-Band.
Current Status and Future Prospects of SiC Power JFETs and ICs.

Jian H. Zhao,Kuang Sheng,Yongxi Zhang,Ming Su

DOI: https://doi.org/10.1093/ietele/e91-c.7.1031

2008-01-01

IEICE Transactions on Electronics

Abstract:This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
SiC based Technology for High Power Electronics and Packaging Applications

Ashutosh Sharma,Soon Jae Lee,Young Joo Jang,Jae Pil Jung

DOI: https://doi.org/10.6117/kmeps.2014.21.2.071

2014-06-30

Journal of the Microelectronics and Packaging Society

Abstract:Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

Demonstration Of The First Power Ic On 4h-Sic

Demonstration of the first SiC power integrated circuit

Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

High efficiency power factor correction power supply based on SiC device

Demonstration of Irradiation-Resistant 4H-Sic Based Photoelectrochemical Water Splitting

Experimental Demonstration of −730V Vertical SiC P-Mosfet with High Short Circuit Withstand Capability for Complementary Inverter Applications

4H–SiC photoconductive switching devices for use in high-power applications

Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Extreme High Efficiency Enabled by Silicon Carbide (sic) Power Devices

Demonstration of the First 4H-Sic Avalanche Photodiodes

Modeling and Design of a Monolithically Integrated Power Converter on SiC

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

A 1200V/100A all-SiC power module for boost converter of EV/HEV's motor driver application

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Advances in SiC materials and devices: an industrial point of view

Current Status and Future Prospects of SiC Power JFETs and ICs.

SiC based Technology for High Power Electronics and Packaging Applications