High efficiency power factor correction power supply based on SiC device

Peng-fei FAN,Long XIAO,Jin-xiang ZHAN,Hao CHEN,Guo-zhu CHEN

DOI: https://doi.org/10.3969/j.issn.1001-4551.2017.04.015

2017-01-01

Abstract:Aiming at the problem that the bridge Boost power factor correction circuit was not efficient.The basic structure and control method of Boost power factor correction circuit,the characteristics and development process of SiC device were analyzed,and the scheme of using SiC device to enhance its power density was proposed.The design of important parameters in power factor correction circuit was introduced.A design method for PFC power inductor was introduced.The design steps were analyzed and the loss distribution of traditional bridge power factor correction circuit was analyzed.Several MOSFETs with different materials were selected and the corresponding 1.2 kW prototype was set up,and the efficiency of each prototype was measured.The results indicate that compares with infineon's latest super-junction structure with CoolMOS,ROHM's high current Si MOSFET,the use of SiC MOSFET can improve the efficiency of the bridge power factor circuit.