A SiC and Si Hybrid Five-Level Unidirectional Rectifier for Medium Voltage Applications
Yifan Zhang,Chushan Li,Chengmin Li,Zhen Xin,Runtian Chen,Wuhua Li,Xiangning He,Hao Ma
DOI: https://doi.org/10.1109/tie.2021.3104579
IF: 7.7
2022-08-01
IEEE Transactions on Industrial Electronics
Abstract:Following the continuous development of wide bandgap (WBG) devices and multilevel converter technology, medium voltage active front ends are becoming promising in future high-power-density and high-power applications. However, the cost issue is one of the major drawbacks, which stops the WBG devices from being widely applied in high-power areas. This article proposes a silicon carbide (SiC) and silicon (Si) hybrid five-level unidirectional rectifier. It requires only four SiC MOSFETs with relatively low blocking voltage and four Si diodes. Meanwhile, by adding snubber capacitors, all the Si devices are with low-speed switching, and the voltage stresses of fast SiC MOSFETs are minimized. In this article, operational analysis and carrier-based phase-disposition pulsewidth modulation scheme for this circuit are discussed in detail. The capacitor voltage balancing and unity power factor are both realized. Simulation and scaled-down experimental results are demonstrated to verify the proposed rectifier. Furthermore, the comparison of the hybrid five-level rectifiers is given to show the advantages of the proposed rectifier in terms of voltage stress, efficiency, and cost.
automation & control systems,engineering, electrical & electronic,instruments & instrumentation