Abstract:Carbon nanotube field-effect transistors (CNTFETs) are increasingly recognized as a viable option for creating high-performance, low-power, and densely integrated circuits (ICs). Advancements in carbon-based electronics, encompassing materials and device technology, have enabled the fabrication of circuits with over 1000 gates, marking carbon-based integrated circuit design as a burgeoning field of research. A critical challenge in the realm of carbon-based very-large-scale integration (VLSI) is the lack of suitable automated design methodologies and infrastructure platforms. In this study, we present the development of a wafer-scale 3 μm carbon-based complementary metal-oxide-semiconductor (CMOS) process design kit (PDK) (3 μm-CNTFETs-PDK) compatible with silicon-based Electronic Design Automation (EDA) tools and VLSI circuit design flow. The proposed 3 μm-CNTFETs-PDK features a contacted gate pitch (CGP) of 21 μm, a gate density of 128 gates/mm 2 , and a transistor density of 554 transistors/mm 2 , with an intrinsic gate delay around 134 ns. Validation of the 3 μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits. Leveraging the carbon-based PDK and a silicon-based design platform, we successfully implemented a complete 64-bit static random-access memory (SRAM) circuit system for the first time, which exhibited timing, power, and area characteristics of clock@10 kHz, 122.1 μW, 3795 μm × 2810 μm. This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow, thereby laying the groundwork for future carbon-based VLSI advancements.

Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC

First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

GaN Monolithic Digital Units on P-GaN Platform

Demonstration of the first SiC power integrated circuit

Wafer-scale carbon-based CMOS PDK compatible with silicon-based VLSI design flow

Inverter and Universal Gates Implementation Using Novel Core Insulator Double Gate (CIDG) MOSFETs

High Performance 70 Nm Cmos Device and Key Technologies

Novel Designed SiC Devices for High Power and High Efficiency Systems

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

A P-Channel MOSFET on 4H-SiC

Aligned carbon nanotube–based electronics on glass wafer