Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

Considerations for SiC Super Junction MOSFET: On-resistance, Gate Structure, and Oxide Shield

Development of SiC Superjunction MOSFET: A Review

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Superjunction SiC TCOX-MOSFET: Study and Comparison

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

An Improved Structure to Enhance the Robustness of SiC Power MOSFETs for a Low Ron, Sp

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Novel Designs of 4H-Sic Trench Gate Metal-Oxide-Semiconductor Field Effect Transistors (umosfets) with Low On-Resistance

Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS

Novel Sic-Trench-Mosfet with Reduced Oxide Electric Field

Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss

Optimization and Comparison of Specific ON-Resistance for Superjunction MOSFETs Considering Three-Dimensional and Insulator-Pillar Concepts

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance