Abstract:A silicon carbide junction field effect transistors (SiC-JFETs) /gallium-nitride high electron mobility transistor (GaN-HEMT) hybrid power switch is proposed with scaled-up current rating enabled by parallel-connected high-voltage (HV, i.e., 1200 V) SiC-JFETs controlled by a single low-voltage enhanced-mode GaN-HEMT in a cascode configuration. Only one set of gate driver (for the GaN HEMT) is required by the cascode device and therewith higher efficiency is achieved regarding the gate-driver loss compared with a board-level parallel connection of several standalone devices (e.g., SiC MOSFETs or SiC/Si cascode devices). Key factors that affect the current-sharing balance between the parallel-connected SiC JFETs and associated matching method are systematically investigated by taking into account the specific transient behaviors of the cascode device. It is found that the variation in SiC JFETs’ threshold voltages plays the most important role in current balancing when the GaN HEMT drives the SiC JFETs internally with superior fast speed. A 1200-V/22-mΩ proof-of-concept prototype of the proposed device with two SiC JFETs in parallel is demonstrated and characterized in a comparative study considering the matching of JFETs. By matching the SiC JFETs according to their transfer curves, the current-sharing imbalance among the SiC JFETs can be limited to be less than 1.5%. This all-wide-bandgap device exhibits high-temperature stability of threshold voltage, extremely small gate-driver loss, and low interelectrode capacitances, of which features are promising for high-frequency applications.

D<i>v</i>/D<i>t</i>-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device

Analysis and Flexible DV/DT Control of an Active Clamping Topology for Series-Connected SiC MOSFETs

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Protecting SiC JFET from Gate Overstress in GaN/SiC Cascode Device without Compromising Switching Performance

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Active Current Source IGBT Gate Drive with Closed-Loop Di/dt and Dv/dt Control

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

A voltage controlled current source gate drive method for IGBT devices

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

Quantitative Analysis and Suppression Strategies of Dv/dt Induced Turn-on of Cascode GaN FETs in Half-bridge Circuits

A Junction Temperature Smoothing Control Method for SiC MOSFETs Based on the Gate Driving Signal Delay