Abstract:For applications which require high peak current and fast rise time, silicon carbide (SiC) material is ideal because of its ability to tolerate high localized temperatures generated during switching. This research was performed to investigate SiC devices for pulse power applications and to analyze the failure of the devices. Seven 2 mm×2 mm SiC gate turn-off thyristors (GTOs) manufactured by Cree, Inc., Durham, NC, were evaluated. The devices were tested at single shot and under repetitive stress using a ring-down capacitor discharge circuit. The current pulsewidth was 2 $\mu{\hbox {s}}$ with a peak current of 1.4 kA (current density of 94.6 ${\rm kA}/{\hbox {cm}}^{2}$) and a maximum $di$/$dt$ of 2.36 ${\rm kA}/\mu{\hbox {s}}$. The maximum power dissipated within the devices was 240 kW. Thermal modeling of these devices was done using ANSYS to analyze the heating and cooling. A two-dimensional model was used that included the device package and bonding materials. The maximum amount of power dissipated was calculated from the 1000-A, 2-$\mu{\hbox {s}}$ pulse. No further power input was added to the model and the heat transfer was plotted on an exponential scale. It was found that heat applied to a 2-$\mu{\hbox {m}}$-thick region of the fingers yielded a temperature greater than 800 °C in the device. It took $1.0{\rm E} ^{-02}$ s for this heat to dissipate and for the device to return to 23 °C. The minimum and maximum stresses were found to be $-2.83{\rm E} ^{+09}~{\rm Pa}$ and $4.06{\rm E} ^{+08}~{\rm Pa}$, respectively.

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

The benefits and current progress of SiC SGTOs for pulsed power applications

Fast SiC Switching Limits for Pulsed Power Applications

Thermal and electrical evaluation of SiC GTOs for pulsed power applications

Long Lifetime, Triggered, Spark-Gap Switch For Repetitive Pulsed Power Applications

Evaluation of SiC GTOs for pulse power switching

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

High-Speed Medium-Voltage SiC Thyristors for Pulsed Power Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

Design of an advanced modular automated evaluation system for experimental high power Si and SiC SGTOs

Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications

Ultrafast Switching of SiC MOSFETs for High-Voltage Pulsed-Power Circuits

Optically Activated SiC Power Transistors for Pulsed-Power Application

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

4H–SiC photoconductive switching devices for use in high-power applications

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs