Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.

Epitaxial Growth of Boron Carbide on 4H-SiC

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

On the origin of epitaxial rhombohedral-B 4 C growth by CVD on 4H-SiC

On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Synthesis of boron carbide films by ion beam sputtering

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Epitaxy of cubic boron nitride on (001)-oriented diamond

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Boron nitride on SiC(0001)

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature