Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Advances in 200 mm 4H SiC Wafer Development and Production

Growth and properties of wide bandgap semiconductor silicon carbide single crystal

Homoepitaxial Growth of Multiple 4H-Sic Wafers Assembled in a Simple Holder Via Conventional Chemical Vapor Deposition

Defect Reduction in SiC Growth Using Physical Vapor Transport

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor

Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Improvement of Fast Homoepitaxial Growth and Defect Reduction Techniques of Thick 4H-Sic Epilayers

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Development of High Quality 8 Inch 4H-SiC Substrates

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Enabling MOCVD production on next generation 150 mm Indium Phosphide wafer size

Germanium doping for improved silicon substrates and devices

Review of solution growth techniques for 4H-SiC single crystal

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-Sic

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor