Abstract:In this work an extensive characterization over XeCl multishot laser irradiation was performed at different energy densities and with different thicknesses of graphitic coating superimposed on P and Al implanted 4H–SiC epitaxial layers. It was noted that at 0.6 J/cm2 the 180 nm coating provides a smooth surface unlike lower thicknesses or uncoated treatments. The μ-Raman investigation showed the crystalline quality as a function of the energy density. Through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) and High Angle Annular Dark Field (HAADF)-STEM investigations, the absence of extended defects and the presence of regions with higher density of carbon interstitials (C i ) was revealed. Circular Transfer Length Method (CTLM) measurements demonstrated how irradiation at 0.9 J/cm2 succeeded to reach values of (7.28 ± 1.15) × 102 Ω/sq, lower than the findings achieved with furnace treatment at 1650 °C. However, electrical characterization carried out through μ-Raman investigation over the Folded Transverse Acoustic (FTA) modes showed consistent activation of the order of 7 × 1019 cm−3 at 0.6 J/cm2 while exhibited CTLM extracted sheet resistance of (3.17 ± 0.06) × 104 Ω/sq. Therefore, this work highlights the contrast between fast processes as the accommodation and ionization of dopant atoms in substitutional positions and slow processes such as the recovery of ion implantation damage. By offering faster processing rates, lower thermal budgets, and high spatial control over the annealing process, laser annealing on 4H–SiC as a post-implantation thermal treatment approach presents several advantages over conventional annealing methods. This study marks a significant progress in comprehending and improving the effectiveness of laser annealing on 4H–SiC.

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

The Preparation of Single-Crystal 4H-Sic Film by Pulsed XeCl Laser Deposition

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

The Annealing Effect of Crystal 4H-Sic Films Prepared by Pulsed Laser Deposition

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Investigation of Amorphous-Sic Thin Film Deposition by RF Magnetron Sputtering for Optical Applications

Advances in 200 mm 4H SiC Wafer Development and Production

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide