Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Development of High Quality 8 Inch 4H-SiC Substrates

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

High quality and wafer-scale cubic silicon carbide single crystals

Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Review of solution growth techniques for 4H-SiC single crystal

Advances in 200 mm 4H SiC Wafer Development and Production

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Diameter enlargement of SiC bulk single crystals based on simulation and experiment

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Research progress of large size SiC single crystal materials and devices

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Silicon Carbide: Progress in Crystal Growth

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C