Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Development of High Quality 8 Inch 4H-SiC Substrates

Advances in 200 mm 4H SiC Wafer Development and Production

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Hot-zone design and optimization of resistive heater for SiC single crystal growth

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels