Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Hot-zone design and optimization of resistive heater for SiC single crystal growth

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Numerical study on temperature and thermal stress behaviors in silicon carbide heating elements within high-temperature annealing furnaces

Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating

Hot Zone Design for Controlled Growth to Mitigate Cracking in Laser Crystal Growth

A New Design of Side Heater for 3D Solid-liquid Interface Improvement in G8 Directional Solidification Silicon Ingot Growth

System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

Thermal system design and optimization of an industrial silicon directional solidification system

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth