Abstract:The Vertical Bridgman (VB) method plays a vital role in growing crystals of Group II-VI semiconductors, oxides, and fluorides. However, achieving large-scale crystals with high quality remains challenging due to the complexities of heat-mass transfer and phase change phenomena involved in the process. To enhance the understanding and control of the VB crystal growth, this paper reviews previous numerical simulation studies on optimizing and controlling the melt-crystal interface, flow, and stress during the growth process, as these factors strongly influence the generation and distribution of defects. The shape of the melt-crystal interface significantly impacts the propagation of grains and inclusions, and a desirable interface can be achieved by enhancing axial heat flux or suppressing radial heat dissipation at the interface. Effective control of melt flow ensures uniform solute distribution, and strategies like suppressing natural convection or introducing forced convection techniques are prove beneficial. Stress plays a pivotal role in dislocation movement and interaction, potentially leading to low angle grain boundaries and cracks. Stress control methods focus on minimizing deformation sources, including temperature, concentration, and mechanical contact. The paper provides detailed explanations of interface, flow, and stress control methods, offering valuable insights for researchers aiming to grow large-scale, high-quality crystals with enhanced efficiency. Furthermore, the control mechanisms and methods discussed in this review may also be applicable to other melt crystal growth techniques.

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Advances of interface, flow, and stress control for VB crystal growth: An overview

Parameter Study of Traveling Magnetic Field for Control of Melt Convection in Directional Solidification of Crystalline Silicon Ingots

System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application

Application of Multi Heaters in a Directional Solidification Furnace for Silicon Solar Cells

Solidification Interface Shape Control in a Continuous Czochralski Silicon Growth System

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

The Influence of Heat Flux Control Unit for Improving the Multi- Crystalline Silicon Ingot for Photovoltaic Application

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Thermal system design and optimization of an industrial silicon directional solidification system

Control of Melt Flow and Oxygen Distribution Using Traveling Magnetic Field During Directional Solidification of Silicon Ingots

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Numerical Analysis for Electromagnetic Field Influence on Heat Transfer Behaviors in Cold Crucible Used for Directional Solidification