A New Design of Side Heater for 3D Solid-liquid Interface Improvement in G8 Directional Solidification Silicon Ingot Growth

Zhiqiang Zhang,Xuegong Yu,Deren Yang

DOI: https://doi.org/10.1007/s12633-022-01701-y

IF: 3.4

2022-01-01

Silicon

Abstract:G8 ingots have a significant advantage in production capacity and yield improvement for directional solidification silicon. To improve the uniformity of the 3D solid/liquid (S/L) interface at the periphery of the G8 ingots, we developed a new structure for side heater that installs six electrodes compared to three in convectional AC heaters. A nearly flat and symmetrical structure of 3D S/L interface was obtained in the G8 ingot grown with the newly designed side heaters, while a distorted shape was observed at the periphery of G8 ingots grown with the conventional side heater. The driving force of the melt convection, the Lorentz force in the silicon melt, was calculated with a simplified hot zone model. It made a reduction of around 90% in the hot zone with the new side heater and could be enhanced by increasing the frequency of the AC power. This work presents a promising method to enhance the uniformity of the 3D S/L interface for large-size (G8) silicon ingots growth.