Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Design and numerical analysis of a novel argon gas tube to reduce impurities in large size casting crystalline silicon furnace

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Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

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Numerical Investigation of Argon Gas Flow Patterns and Their Effects on Mc-Si Ingot Growth Process: Solar Cell Applications

Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process

A New Design of Side Heater for 3D Solid-liquid Interface Improvement in G8 Directional Solidification Silicon Ingot Growth

Thermal system design and optimization of an industrial silicon directional solidification system

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

Physical Simulation Study on Flow Field Characteristics of Molten Steel in 70t Ladle Bottom Argon Blowing Process

Numerical and experimental study of polysilicon deposition on silicon tubes

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

CFD-Aided Design for Polysilicon Production System

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Numerical simulation of the flow and erosion behavior of exhaust gas and particles in polysilicon reduction furnace

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth

Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Effects of injection conditions on temperature and component distributions in a CVD furnace for large‐size silica glass