Abstract:Highly indium-rich group-III nitrides are attracting attention for advancing our capacity to create highly effective optical emitters at extended visible/IR wavelengths or for enhancing bandgap engineering possibilities within the group-III nitride material framework. Current methods of synthesis are constrained in their efficacy, partially owing to the low decomposition temperature of indium nitride. Implementation of a new design of a vertical high-pressure spatial chemical vapor deposition (HPS-CVD) reactor with six separated precursor source zones and a rotating wafer carrier disk carrying four 2-inch wafers is proposed and analyzed using COMSOL Multiphysics as a commercial computational fluid dynamics (CFD) program to study the fluid phenomena inside the numerical domain. This study focuses on understanding the different flow patterns within the chambers at super-atmospheric conditions (5 atm to 30 atm) and identifying suitable operating conditions under which smooth and dominant vortex-free flow is achieved. Four 2-inch wafers are heated to maintain a temperature of 1200–1300 K at each pressure and gas type. Three different gas types (nitrogen, hydrogen, and ammonia) are used, and the impacts of different inlet flow velocities and rotational speeds are investigated and discussed. An operating matrix is presented for each analyzed system pressure providing suitable combinations of these operational variables for smooth flow in the chambers. Each gas type was identified to have a range of suitable rotational and inlet velocity regimes at each operating pressure. Overlap of these three gas-specific operating condition windows resulted in the identification of a generally suitable operating condition for smooth flow patterns in the system regardless of the gas type used, as required for the growth of group-III nitride materials.

CFD-Aided Design for Polysilicon Production System

Numerical and experimental study of polysilicon deposition on silicon tubes

Simulation of Heat Transfer in a Vertical Tubular CVD Reactor

Heat and mass transfer characteristics of three-dimensional bell-shaped polysilicon chemical vapor deposition reactor

CFD Simulation of the Hydrodynamic Behavior in an Internally Circulating Fluidized Bed Reactor for Producing Polysilicon Granules

A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Numerical simulation of granular silicon growth and silicon fines formation process in polysilicon fluidized bed

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

Study on Internal Circulation Fluidized Bed Reactor for Preparing Polysilicon Granules

Enhancing removal of hydrogen from granular polysilicon by innovating vacuum separation model and method for SoG-Si

Fluidized Bed Reactors for Solar-Grade Silicon and Silane Production

CFD-DEM analysis of particle polydispersity on the performance of fluidised bed reactor during silane pyrolysis

Hydrodynamic behaviors of an internally circulating fluidized bed with wide-size-distribution particles for preparing polysilicon granules

Numerical simulation of flow and heat transfer in a novel polysilicon reduction furnace

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Progress in Preparation Technology of Polysilicon

Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

Manufacture of Granular Polysilicon from Trichlorosilane in a Fluidized-Bed Reactor

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures