Abstract:A C-clamp insulation block was designed and installed at the top of the heat exchanger block (HEB) in a lab-scale directional solidification system (DSS) to produce the high-efficiency multi-crystalline Silicon (mc-Si) ingot for solar cell applications. The transient global model is used to study the DSS's heat transport and investigate the effect of modified DSS on the solid-liquid (S-L) interface, power consumption, and impurity concentration. Results are compared. The simulation results show that the modified DSS grown mc-Si ingot's power consumption of 489 kWh, is comparatively lower than the conventionally grown ingot's power consumption of 544 kWh. The S-L interface shape changes from W-shape to convex in the conventional DSS growth and in the modified DSS growth is changed from highly convex to slightly convex S-L interface. The radial temperature gradient increases due to rapid growth in the modified DSS. However, the conventional DSS ingot has a lower radial temperature gradient due to the heat extraction from the side silica crucible wall (SCW). So, it maintains the minimum temperature gradient at the margin of the grown mc-Si ingot. The S-L interface and the growth rates affect the oxygen and carbon concentration in the grown mc-Si ingot. The oxygen concentration in the conventional DSS grown ingot ranges from 1.20E12 to 8.00E17 atoms/cm 3 and in the modified DSS grown ingot it ranges from 1.20E12 to 2.40 E17 atoms/cm 3 . The carbon concentration in the conventional DSS grown ingot ranges from 1.58E16 to 1.60E17 atoms/cm 3 and in the modified DSS grown ingot it ranges from 1.58E16 to 8.79E16 atoms/cm 3 . The modified DSS-grown ingot gained maximum oxygen and carbon concentration in the ingot red zone. It need not be considered for practical applications. The modified ingot reduces the wire saw damage in the wafering process due to the presence of minimum carbon concentration. Due to the lower oxygen concentration level in the modified DSS grown mc-Si ingot, the LID effect reduces in the solar cell .

Numerical Investigation of Argon Gas Flow Patterns and Their Effects on Mc-Si Ingot Growth Process: Solar Cell Applications

Simulation analysis on furnace pressure for reducing the impurities concentrations distribution during the growth of mc-Si ingot by DS process: Solar cell applications

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Design and numerical analysis of a novel argon gas tube to reduce impurities in large size casting crystalline silicon furnace

Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Numerical analysis of thermohydraulic behavior in a directional solidification furnace

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Design and Numerical Optimization of Gas Guidance System in Casting Silicon Furnace by the Orthogonal Experiment

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells

The Influence of Heat Flux Control Unit for Improving the Multi- Crystalline Silicon Ingot for Photovoltaic Application

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method