Abstract:A C-clamp insulation block was designed and installed at the top of the heat exchanger block (HEB) in a lab-scale directional solidification system (DSS) to produce the high-efficiency multi-crystalline Silicon (mc-Si) ingot for solar cell applications. The transient global model is used to study the DSS's heat transport and investigate the effect of modified DSS on the solid-liquid (S-L) interface, power consumption, and impurity concentration. Results are compared. The simulation results show that the modified DSS grown mc-Si ingot's power consumption of 489 kWh, is comparatively lower than the conventionally grown ingot's power consumption of 544 kWh. The S-L interface shape changes from W-shape to convex in the conventional DSS growth and in the modified DSS growth is changed from highly convex to slightly convex S-L interface. The radial temperature gradient increases due to rapid growth in the modified DSS. However, the conventional DSS ingot has a lower radial temperature gradient due to the heat extraction from the side silica crucible wall (SCW). So, it maintains the minimum temperature gradient at the margin of the grown mc-Si ingot. The S-L interface and the growth rates affect the oxygen and carbon concentration in the grown mc-Si ingot. The oxygen concentration in the conventional DSS grown ingot ranges from 1.20E12 to 8.00E17 atoms/cm 3 and in the modified DSS grown ingot it ranges from 1.20E12 to 2.40 E17 atoms/cm 3 . The carbon concentration in the conventional DSS grown ingot ranges from 1.58E16 to 1.60E17 atoms/cm 3 and in the modified DSS grown ingot it ranges from 1.58E16 to 8.79E16 atoms/cm 3 . The modified DSS-grown ingot gained maximum oxygen and carbon concentration in the ingot red zone. It need not be considered for practical applications. The modified ingot reduces the wire saw damage in the wafering process due to the presence of minimum carbon concentration. Due to the lower oxygen concentration level in the modified DSS grown mc-Si ingot, the LID effect reduces in the solar cell .

Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis

Collaborative R&D Between Multicrystalline Silicon Ingots and Battery Efficiency Improvement—effect of Shadow Area in Multicrystalline Silicon Ingots on Cell Efficiency

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Simulation analysis on furnace pressure for reducing the impurities concentrations distribution during the growth of mc-Si ingot by DS process: Solar cell applications

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Experimental Study Of 3d Solid-Liquid Interfaces And Their Influence On Directional Solidification Silicon Ingot

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Numerical Investigation of Argon Gas Flow Patterns and Their Effects on Mc-Si Ingot Growth Process: Solar Cell Applications

The Influence of Heat Flux Control Unit for Improving the Multi- Crystalline Silicon Ingot for Photovoltaic Application

Influence of Radiation Heat Transfer on Mc-Si Ingot during Directional Solidification: A Numerical Investigation

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

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(Invited) Defects in Cast-Mono Crystalline Silicon

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Effect of melt flow on impurity distribution in directional solidification of silicon solar cells

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation