To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

H. S. Fang,L. L. Zheng,Q. J. Zhang,S. Wang,Y. Y. Pan

DOI: https://doi.org/10.1115/imece2012-86653

2013-01-01

Abstract:A global modeling is conducted to predict heat transfer, fluid flow, the shape of solid/liquid (S/L) interface, and electromagnetic field during a Radio Frequency (RF)-heated Cz-growth of sapphire single crystal process. The relationships between the convexity of the S/L interface and furnace design/growth parameters are established. Thermal stress distributions of each case are modeled, and the one with the least level of the maximum von Mises stress is proposed. Specific efforts are further made to achieve the flat S/L shape by modifying the furnace design. It is found that a flat interface is crucial for the reduction of thermal stress. Therefore, stress-related defects in sapphire single crystals grown by Czochralski (Cz) method could be optimized from the discussion.