Abstract:Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re-2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re-2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re-2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re-2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re-2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Numerical Investigation of the Effect of Rotation on the Oscillatory Thermocapillary Convection and Dopant Transport in a Silicon Liquid Bridge

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Effect of Orientation on Integrity of Single Crystal During Laser Melted Single Crystal

Study on the Effect of Melt Flow Behavior on the Uniformity of Phosphorus Doping During the Growth of Large-Size N-Type Monocrystalline Silicon by Czochralski Method

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Melt Convection and Temperature Distribution in 300 Mm Czochralski Crystal Growth with Transverse Magnetic Field

Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal

The Study on Growth Interface of Floating Zone Silicon Crystal

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Control of oxygen transport in the melt of a czochralski-silicon crystal growth

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

The Influence of Marangoni Effect on the Growth Quality of Multi-Crystalline Silicon During the Vacuum Directional Solidification Process

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Effect of Magnetic Field Structure on Carbon Concentration in 300 mm Diameter Czochralski Single Crystal Silicon Growth

Control Of Flow Pattern And Solidification Interface Shape In An Induction Heated Czochralski Crystal Growth System