Abstract:SiC polytypes have been studied for decades, both experimentally and with atomistic simulations, yet no consensus has been reached on the factors that determine their stability and growth. Proposed governing factors are temperature-dependent differences in the bulk energy, biaxial strain induced through point defects, and surface properties. In this work, we investigate the thermodynamic stability of the 3C, 2H, 4H, and 6H polytypes with density functional theory (DFT) calculations. The small differences of the bulk energies between the polytypes can lead to intricate changes in their energetic ordering depending on the computational method. Therefore, we employ and compare various DFT codes, i.e., vasp , cp2k , and fhi-aims ; exchange-correlation functionals, i.e., LDA, PBE, PBEsol, PW91, HSE06, SCAN, and RTPSS; and nine different van der Waals (vdW) corrections. At T=0 K, 4H-SiC is marginally more stable than 3C-SiC, and the stability further increases with temperature by including entropic effects from lattice vibrations. Neither the most advanced vdW corrections nor strain on the lattice have a significant effect on the relative polytype stability. We further investigate the energies of the (0001) polytype surfaces that are commonly exposed during epitaxial growth. For Si-terminated surfaces, we find 3C-SiC to be significantly more stable than 4H-SiC. We conclude that the difference in surface energy is likely the driving force for 3C-nucleation, whereas the difference in the bulk thermodynamic stability slightly favors the 4H and 6H polytypes. In order to describe the polytype stability during crystal growth correctly, it is thus crucial to take into account both of these effects. https://doi.org/10.1103/PhysRevB.106.075201 ©2022 American Physical Society

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

High quality and wafer-scale cubic silicon carbide single crystals

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Formation Mechanism of Two Types of Polytype Transformation in off-axis 4H-SiC Boules

Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method