Abstract:Cubic silicon carbide (3C‐SiC) crystals are grown by the close space physical vapor transport (CS‐PVT) method while the growth temperature, pressure, and the nitrogen doping are varied during three different growth run series. The influence of the growth parameters on the step‐controlled surface morphology and stacking fault density is systematically investigated and discussed. A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

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Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

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Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

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Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

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Growth and doping of silicon carbide with germanium: a review

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Study on Purification Technology of Silicon Carbide Crystal Growth Powder

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals