Abstract:Silicon carbide is a promising semiconductor material for electrical and optoelectronic applications in the area of high power, high temperature, high frequency and intense radiation. Many groups have worked on growing SiC bulk crystals by sublimation from SiC powder source at a temperature above 2000 oC under an argon environment. They have also worked on improving the crystal growth rate. Traditional approach is to increase furnace temperature to enhance the growth rate. However, high cost of inert crucible at high temperature and impurity caused by crucible degradation set limit on the maximum growth rate which can be achieved. Current existing crucible and other components in the furnace are no longer passive at high temperature. Also understanding of vapor transport during powder sublimation and the interplay between vapor transport and powder sublimation is important for the optimization of the sublimation growth process. A comprehensive numerical model combining heat transfer, sublimation, species transport, and powder porosity evolution of SiC sublimation growth process is developed in this paper. The mechanism of vapor transport is described, in which a driving force is introduced to explain vapor transport. A new method to increase crystal growth rate is proposed based on the model. The new method includes changing the initial powder porosity and creating a hole in the packed powder. Simulation results for the case with a central hole and without hole are presented. The results show that the powder sublimation rate increases by creating a hole, and it is also validated by experiments. The results also reveal that the mass of the as-grown crystal increases if the powder sublimation rate increases. Finally, the powder geometry is optimized using numerical simulations.

Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Effect of Impurities Control on the Crystallization and Densification of Polymer-Derived SiC Fibers

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Characterizations on the Doping of Single-Crystal Silicon Carbide

Effect of Impurities MgO, CaO, Al2O3, AlN and Al on Α/β Ratio in Combustion Synthesis of Α-Si3n4

Novel Method for High Speed SiC Vapor Growth

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications

Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

Direct Determination of Impurities in High Purity Silicon Carbide by Inductively Coupled Plasma Optical Emission Spectrometry Using Slurry Nebulization Technique

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Impact of rapid thermal annealing on impurities removal efficiency from silicon carbide for optoelectronic applications