Abstract:Solar panels made of crystalline silicon (c‐Si) have long been acknowledged as the sole economically viable and environmentally responsible alternative to fossil fuels. The present overview demonstrates how the components are the developed silicon ingot's distribution and impurity production are impacted by the furnace system, how the chemical reaction is impacted by the growing process. It also discusses the results of simulations and tests on the growth of c‐Si and mc‐Si ingots, as well as proposes the geometrical system, processing settings, and argon gas flow rate that are the most suitable. Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications

Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

(Invited) Defects in Cast-Mono Crystalline Silicon

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Modulation of Electrical Characteristics at a Ni-contaminated Silicon Grain Boundary by Engineering the Metal Precipitates

SiC Generation Mechanism in Photovoltaic Crystal Pulling Waste Graphite Infusion Cylinder

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Research on the Boron Contamination at the P/i Interface of Microcrystalline Silicon Solar Cells Deposited in a Single PECVD Chamber

Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth

Recycling of silicon scraps by electron beam melting coupled with directional solidification and its mechanism of impurity removal

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

Multicrystalline Silicon Crystal Assisted by Silicon Flakes As Seeds

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

Advanced PECVD Processes for SiNW Based Solar Cells and Thin Film Transistors

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

Characterization of Surface and Structure of in-situ Doped Sol-Gel-Derived Silicon Carbide

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Nanopurification of Silicon from 84% to 99.999% Purity with a Simple and Scalable Process.