Abstract:Abstract Silicon carbide (SiC) has been widely utilized in semiconductor industry for the development of high power electrical devices. Using chemical vapor deposition (CVD) to grow a thin epitaxial layer onto SiC substrate surface with orderly lattice arrangement, good surface morphology and low doping concentration is required. During epitaxial growth, the high reaction temperature and its distribution are generally difficult to measure and will affect the properties of epitaxial growth layer. This study presents a thermal-field testing method based on process temperature control rings (PTCRs) to measure the high temperature distribution inside the epitaxial growth reaction chamber, and to study the effects of reaction chamber structure and epitaxial growth parameters on the quality of epitaxial layer. The measurement accuracy of PTCRs was characterized using silicon melting experiments and the measuring principle of PTCRs was presented. The thermal field of the reaction chamber was then numerically simulated and compared with experimental results. The experiment results exhibit a temperature gradient of less than 0.4 °C/mm on surface, indicating good temperature uniformity. Epitaxial growth is an essential process in the fabrication of SiC devices, as it enables the production of layers with precise doping density and thickness. The SiC epitaxial growth experiments were conducted to study the effects of gas flow ratio and doping flow ratio of three inlet flow channels on the thickness and doping concentration distributions. The results demonstrated that the non-uniformity of thickness and doping concentration of epitaxial layer was below 1.5 % and 4.0 %, respectively.

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Low Temperature Silicon Epitaxy in a Single-Wafer RTP Reactor with Microwave Heating

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Silicon epitaxy grown by electron‐beam evaporation in ultrahigh vacuum at 200 °C

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations